InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz

A. Khalid; C. Li; V. Papageogiou; G. M. Dunn; M. J. Steer; I. G. Thayne; M. Kuball; C. H. Oxley; M. Montes Bajo; A. Stephen; J. Glover; D. R. S. Cumming

doi:10.1109/LED.2012.2224841

InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz

A. Khalid
, C. Li
, V. Papageogiou
, G. M. Dunn
, M. J. Steer
, I. G. Thayne
, M. Kuball
, C. H. Oxley
, M. Montes Bajo
, A. Stephen
, J. Glover
, D. R. S. Cumming

Physics

University of Bristol
University of Glasgow
De Montfort University

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.

Original language	English
Pages (from-to)	39-41
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	1
Early online date	15 Nov 2012
DOIs	https://doi.org/10.1109/LED.2012.2224841
Publication status	Published - Jan 2013

Keywords

gallium and indium compounds
Gunn devices
millimeter-wave source
semiconductor heterojunctions

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10.1109/LED.2012.2224841

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abstract = "We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.",

keywords = "gallium and indium compounds, Gunn devices, millimeter-wave source, semiconductor heterojunctions",

author = "A. Khalid and C. Li and V. Papageogiou and Dunn, \{G. M.\} and Steer, \{M. J.\} and Thayne, \{I. G.\} and M. Kuball and Oxley, \{C. H.\} and \{Montes Bajo\}, M. and A. Stephen and J. Glover and Cumming, \{D. R. S.\}",

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doi = "10.1109/LED.2012.2224841",

language = "English",

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T1 - InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz

AU - Khalid, A.

AU - Li, C.

AU - Papageogiou, V.

AU - Dunn, G. M.

AU - Steer, M. J.

AU - Thayne, I. G.

AU - Kuball, M.

AU - Oxley, C. H.

AU - Montes Bajo, M.

AU - Stephen, A.

AU - Glover, J.

AU - Cumming, D. R. S.

PY - 2013/1

Y1 - 2013/1

N2 - We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.

AB - We present the first results of a planar Gunn diode made in In GaAs on an InP substrate, operating at a fundamental frequency up to 164 GHz. For a 120-μm-wide device with a 1.3-μm active channel length, the highest power achieved was approximately-10 dBm at 164 GHz.

KW - gallium and indium compounds

KW - Gunn devices

KW - millimeter-wave source

KW - semiconductor heterojunctions

UR - https://www.scopus.com/pages/publications/84871817488

U2 - 10.1109/LED.2012.2224841

DO - 10.1109/LED.2012.2224841

M3 - Article

AN - SCOPUS:84871817488

SN - 0741-3106

VL - 34

SP - 39

EP - 41

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -

InGaAs planar gunn diodes operating at a fundamental frequency of 164 GHz

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Keywords

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