Molecular dynamics investigation of nano-polishing on silicon carbide substrate with rough topography using a rotating diamond abrasive

To achieve low-damage polishing on silicon carbide substrates utilizing a rotating diamond abrasive, the molecular dynamics model for nano-polishing is established. The nano-polishing simulation of silicon carbide substrates with both smooth and rough topographies is conducted using the diamond abrasive at two different velocity ratios. The constructed MD models are compared with existing models to assess the influence of abrasive rotation and substrate topography. The results provide valuable insights into the nano-polishing. Firstly, improving substrate smoothness and increasing abrasive rotation can effectively reduce von Mises stress, force, temperature, and amorphous layer thickness. Secondly, the atomic motion within silicon carbide substrates is affected by abrasive rotation and substrate topography, thus altering the removal mechanism. Finally, the differences in friction coefficient between the constructed MD models and existing models arise from atomic adhesion and plie-up phenomena.