Simulated current response in avalanche photodiodes

P. J. Hambleton; S. A. Plimmer; J. R. David; G. J. Rees; Geoffrey Martin Dunn

doi:10.1063/1.1432122

Simulated current response in avalanche photodiodes

P. J. Hambleton, S. A. Plimmer, J. R. David, G. J. Rees, Geoffrey Martin Dunn

Physics

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The time dependent current response to an impulse of injected carriers is calculated for an avalanche photodiode using Monte Carlo simulation. For low electric fields and long avalanche regions the results agree with the conventional model, which assumes that carriers travel always with their saturated drift velocities. However, while diffusion remains unimportant, for high fields and short avalanche regions, the conventional model underestimates the device speed. Monte Carlo simulations show that the mean downstream average velocity of ionizing carriers is significantly enhanced at high electric fields and agreement is restored if we allow for this effect in the conventional model. (C) 2002 American Institute of Physics.

Original language	English
Pages (from-to)	2107-2111
Number of pages	4
Journal	Journal of Physics D: Applied Physics
Volume	91
Issue number	4
DOIs	https://doi.org/10.1063/1.1432122
Publication status	Published - Feb 2002

Keywords

SEPARATE ABSORPTION
FREQUENCY-RESPONSE
SIMPLE-MODEL
DEAD SPACE
MULTIPLICATION
NOISE

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10.1063/1.1432122

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title = "Simulated current response in avalanche photodiodes",

abstract = "The time dependent current response to an impulse of injected carriers is calculated for an avalanche photodiode using Monte Carlo simulation. For low electric fields and long avalanche regions the results agree with the conventional model, which assumes that carriers travel always with their saturated drift velocities. However, while diffusion remains unimportant, for high fields and short avalanche regions, the conventional model underestimates the device speed. Monte Carlo simulations show that the mean downstream average velocity of ionizing carriers is significantly enhanced at high electric fields and agreement is restored if we allow for this effect in the conventional model. (C) 2002 American Institute of Physics.",

keywords = "SEPARATE ABSORPTION, FREQUENCY-RESPONSE, SIMPLE-MODEL, DEAD SPACE, MULTIPLICATION, NOISE",

author = "Hambleton, {P. J.} and Plimmer, {S. A.} and David, {J. R.} and Rees, {G. J.} and Dunn, {Geoffrey Martin}",

year = "2002",

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doi = "10.1063/1.1432122",

language = "English",

volume = "91",

pages = "2107--2111",

journal = "Journal of Physics D: Applied Physics",

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T1 - Simulated current response in avalanche photodiodes

AU - Hambleton, P. J.

AU - Plimmer, S. A.

AU - David, J. R.

AU - Rees, G. J.

AU - Dunn, Geoffrey Martin

PY - 2002/2

Y1 - 2002/2

N2 - The time dependent current response to an impulse of injected carriers is calculated for an avalanche photodiode using Monte Carlo simulation. For low electric fields and long avalanche regions the results agree with the conventional model, which assumes that carriers travel always with their saturated drift velocities. However, while diffusion remains unimportant, for high fields and short avalanche regions, the conventional model underestimates the device speed. Monte Carlo simulations show that the mean downstream average velocity of ionizing carriers is significantly enhanced at high electric fields and agreement is restored if we allow for this effect in the conventional model. (C) 2002 American Institute of Physics.

AB - The time dependent current response to an impulse of injected carriers is calculated for an avalanche photodiode using Monte Carlo simulation. For low electric fields and long avalanche regions the results agree with the conventional model, which assumes that carriers travel always with their saturated drift velocities. However, while diffusion remains unimportant, for high fields and short avalanche regions, the conventional model underestimates the device speed. Monte Carlo simulations show that the mean downstream average velocity of ionizing carriers is significantly enhanced at high electric fields and agreement is restored if we allow for this effect in the conventional model. (C) 2002 American Institute of Physics.

KW - SEPARATE ABSORPTION

KW - FREQUENCY-RESPONSE

KW - SIMPLE-MODEL

KW - DEAD SPACE

KW - MULTIPLICATION

KW - NOISE

U2 - 10.1063/1.1432122

DO - 10.1063/1.1432122

M3 - Article

SN - 0022-3727

VL - 91

SP - 2107

EP - 2111

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 4

ER -

Simulated current response in avalanche photodiodes

Abstract

Keywords

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