Thermal Profiles Within the Channel of Planar Gunn Diodes Using Micro-Particle Sensors

James Glover; Ata Khalid; David  Cumming; Geoffrey M. Dunn; Martin Kuball; Miguel Montes Bajo; Chris H. Oxley

doi:10.1109/LED.2017.2731961

Thermal Profiles Within the Channel of Planar Gunn Diodes Using Micro-Particle Sensors

James Glover, Ata Khalid, David Cumming, Geoffrey M. Dunn, Martin Kuball, Miguel Montes Bajo, Chris H. Oxley

Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The paper describes the use of a novel microparticle sensor (~3 μm diameter) and infra-red (IR) microscopy to measure the temperature profile within the active channel (typically 3 μm length and 120 μm width) of planar Gunn diodes. The method has enabled detailed temperature measurements showing an asymmetrical temperature profile along the active width of these devices. The asymmetrical temperature profile suggests a similar behaviour in the channel current density, which may contribute to the lower than expected RF output power.

Original language	English
Pages (from-to)	1325-1327
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	38
Issue number	9
Early online date	26 Jul 2017
DOIs	https://doi.org/10.1109/LED.2017.2731961
Publication status	Published - Sept 2017

Bibliographical note

The authors would like to thank the EPSRC for financially supporting this research.

Keywords

infrared measurements
temperature measurement
Gunn devices
planar objects

Access to Document

10.1109/LED.2017.2731961Licence: Unspecified

Cite this

@article{d133a8cb8a3147bba4845a15a3bc0ab8,

title = "Thermal Profiles Within the Channel of Planar Gunn Diodes Using Micro-Particle Sensors",

abstract = "The paper describes the use of a novel microparticle sensor (~3 μm diameter) and infra-red (IR) microscopy to measure the temperature profile within the active channel (typically 3 μm length and 120 μm width) of planar Gunn diodes. The method has enabled detailed temperature measurements showing an asymmetrical temperature profile along the active width of these devices. The asymmetrical temperature profile suggests a similar behaviour in the channel current density, which may contribute to the lower than expected RF output power.",

keywords = "infrared measurements, temperature measurement, Gunn devices, planar objects",

author = "James Glover and Ata Khalid and David Cumming and Dunn, {Geoffrey M.} and Martin Kuball and Bajo, {Miguel Montes} and Oxley, {Chris H.}",

note = "The authors would like to thank the EPSRC for financially supporting this research.",

year = "2017",

month = sep,

doi = "10.1109/LED.2017.2731961",

language = "English",

volume = "38",

pages = "1325--1327",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Thermal Profiles Within the Channel of Planar Gunn Diodes Using Micro-Particle Sensors

AU - Glover, James

AU - Khalid, Ata

AU - Cumming, David

AU - Dunn, Geoffrey M.

AU - Kuball, Martin

AU - Bajo, Miguel Montes

AU - Oxley, Chris H.

N1 - The authors would like to thank the EPSRC for financially supporting this research.

PY - 2017/9

Y1 - 2017/9

N2 - The paper describes the use of a novel microparticle sensor (~3 μm diameter) and infra-red (IR) microscopy to measure the temperature profile within the active channel (typically 3 μm length and 120 μm width) of planar Gunn diodes. The method has enabled detailed temperature measurements showing an asymmetrical temperature profile along the active width of these devices. The asymmetrical temperature profile suggests a similar behaviour in the channel current density, which may contribute to the lower than expected RF output power.

AB - The paper describes the use of a novel microparticle sensor (~3 μm diameter) and infra-red (IR) microscopy to measure the temperature profile within the active channel (typically 3 μm length and 120 μm width) of planar Gunn diodes. The method has enabled detailed temperature measurements showing an asymmetrical temperature profile along the active width of these devices. The asymmetrical temperature profile suggests a similar behaviour in the channel current density, which may contribute to the lower than expected RF output power.

KW - infrared measurements

KW - temperature measurement

KW - Gunn devices

KW - planar objects

U2 - 10.1109/LED.2017.2731961

DO - 10.1109/LED.2017.2731961

M3 - Article

SN - 0741-3106

VL - 38

SP - 1325

EP - 1327

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Thermal Profiles Within the Channel of Planar Gunn Diodes Using Micro-Particle Sensors

Abstract

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this