A 218-GHz second-harmonic multiquantum well GaAs-based planar Gunn diodes

A. Khalid*, C. Li, V. Papageorgiou, N. J. Pilgrim, G. M. Dunn, D. R. S. Cumming

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We present a multiquantum-well channel GaAs-based planar Gunn diode. By introducing extra channels, the output RF power has been significantly improved compared to single-channel GaAs-based planar Gunn diodes. For a 1.14 mu m length and 60 mu m wide device, the highest power achieved was approximately -4 dBm operating in fundamental mode at 109 GHz, and -26.6 dBm at its second harmonic at 218 GHz. The DC-to-RF conversion efficiency was similar to 0.3% for the fundamental mode of oscillation. (C) 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:686688, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27393

Original languageEnglish
Pages (from-to)686-688
Number of pages3
JournalMicrowave and Optical Technology Letters
Issue number3
Early online date28 Jan 2013
Publication statusPublished - Mar 2013


  • semiconductor heterojunctions
  • millimeter wave source
  • Gunn devices
  • gallium compounds


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