Investigating effect of temperature on barrier height of PWB diodes

M. Akura*, G. M. Dunn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)
13 Downloads (Pure)


The effect of temperature on the barrier height of a gallium arsenide (GaAs)/aluminium GaAs (AlGaAs) potential-well barrier (PWB) diodes is investigated and reported in this Letter. It was found that more electrons diffuse from the doped AlGaAs(silicon) into the undoped layers with increasing temperature, this modifies the electric field along these layers and hence the barrier height. The barrier height increases with increasing temperature at an increasing rate of 0.093–0.36meV/K in the temperature range of 200–380 K in a similar way to the planar-doped barrier (PDB) diode. The result of the computer simulations, however, shows that the PWB diode is less sensitive than the PDB diode due to the active nature of the charge in the well.
Original languageEnglish
Article numberel.2017.3353
Pages (from-to)42-43
Number of pages2
JournalElectronics Letters
Issue number1
Early online date21 Nov 2017
Publication statusPublished - 11 Jan 2018


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