Investigating the role of band offset on the property and op-eration of the potential well barrier diodes

Mise Akura* (Corresponding Author), Geoffrey Dunn

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)
4 Downloads (Pure)


Carrier dynamics in a Potential Well Barrier (PWB) diode has been explored and demonstrated in this paper. Three heterostructures in the GaAs/AlGaAs system namely, and with corresponding band offsets of 0.1, 0.25 and 0.30 eV respectively were investigated us-ing the drift-diffusion (DD) and Monte Carlo (MC) mod-els. The behaviour of the diodes with different band off-sets were compared in terms of mean electron velocity, mean electron energy and density of charge along the in-trinsic regions and in the potential well. The MC simula-tion model enables the effect of space-charge injection and carrier heating which were not included in previous study of these structures be treated quantitatively. Significant dif-ferences exist in the behaviour of the three heterojunctions as this impacts the curvature coefficient and

ideality factor of diode. Both the ideality factor and curva-ture coefficient reflect the magnitude of band offset of the heterojunctions (interface).

Original languageEnglish
Article number1800284
Journalphysica status solidi (c)
Issue number5
Early online date9 Jan 2019
Publication statusPublished - May 2019

Bibliographical note

We gratefully acknowledge the School of Natural and Computing Sciences (SNCS), College of Physical Sciences, University of Aberdeen, UK for providing fund to support this work


  • band offset
  • heterostructure
  • orthophosphoric etching
  • carrier heating
  • curvature coefficient
  • heterostructures


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