Investigation of Contact Edge Effects in the Channel of Planar Gunn Diodes

A. Mindil*, G. M. Dunn, A. Khalid, C. H. Oxley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


The effect of the edge of the channel on the operation of planar Gunn diodes has been examined using Monte Carlo simulations. High fields at the corner of the anode contact are known to cause impact ionization and consequent electroluminescence, but our simulations show that the Gunn domains are attracted to these corners, perturbing the formation of the domains, which can lead to chaotic dynamics within the rest of the channel leading to uneven heating and reduced RF output power. We show how novel shaping of the electrical contacts at the ends of the channel reduces the attraction and restores the domain wavefronts for good device operation.

Original languageEnglish
Article number8913625
Pages (from-to)53-56
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number1
Early online date26 Nov 2019
Publication statusPublished - Jan 2020

Bibliographical note

Manuscript received September 12, 2019; revised October 24, 2019; accepted October 30, 2019. Date of publication November 26, 2019; date of current version December 30, 2019.

The authors would like to thank the University of Aberdeen
for providing the necessary support.


  • Anodes
  • Cathodes
  • Contacts
  • Shape
  • Radio frequency
  • Distortion
  • Monte Carlo methods
  • Channel edge
  • GaAs
  • Monte Carlo
  • planar Gunn diode


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