Multiple Transit Region Gunn Diodes

Geoffrey Martin Dunn, Y. P. Teoh

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Conventional Gunn diodes consist of a single transit region. For high frequency generation, these devices are quite short and hence yield limited power because of the small potential that can be applied before the device breaks down. In this paper, we present Monte Carlo simulations of multiple (up to eight) transit regions Gunn Diodes and investigate their feasibility and power performance. We found that coherent transfer of domains occurs in all the devices we investigated and there seems to be no obvious upper limit to the number of transit regions that could be incorporated into a single device (in the absence of thermal limitations). Our models predict that the power attainable from the Gunn diodes increases linearly with the square of the number of transit regions.

Original languageEnglish
JournalElectronics Letters
Publication statusPublished - 2002


Dive into the research topics of 'Multiple Transit Region Gunn Diodes'. Together they form a unique fingerprint.

Cite this