The use of doping spikes in GaN Gunn diodes

R. F. Macpherson; G. M. Dunn

doi:10.1063/1.2969779

The use of doping spikes in GaN Gunn diodes

R. F. Macpherson, G. M. Dunn

Physics

Research output: Contribution to journal › Article

14 Citations (Scopus)

Abstract

The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode devices by the substitution of a fully depleted p-type doping spike for the doping notch used to promote domain formation is explored using a Monte Carlo model. The p-type doping spike is a commonly used structure, but its potential use in GaN has not been previously evaluated. The results for a functional doping spike are compared, favorably, to those for a physically reasonable doping notch. (C) 2008 American Institute of Physics.

Original language	English
Article number	062103
Number of pages	2
Journal	Applied Physics Letters
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.2969779
Publication status	Published - 11 Aug 2008

Keywords

microwave-power generation
Monte-Carlo analysis
devices
performance
substrate
transport

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10.1063/1.2969779

Cite this

@article{a339aa4c1cc94b25a94bed7f61fe23ae,

title = "The use of doping spikes in GaN Gunn diodes",

abstract = "The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode devices by the substitution of a fully depleted p-type doping spike for the doping notch used to promote domain formation is explored using a Monte Carlo model. The p-type doping spike is a commonly used structure, but its potential use in GaN has not been previously evaluated. The results for a functional doping spike are compared, favorably, to those for a physically reasonable doping notch. (C) 2008 American Institute of Physics.",

keywords = "microwave-power generation, Monte-Carlo analysis, devices, performance, substrate, transport",

author = "Macpherson, {R. F.} and Dunn, {G. M.}",

year = "2008",

month = aug,

day = "11",

doi = "10.1063/1.2969779",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "1077-3118",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - The use of doping spikes in GaN Gunn diodes

AU - Macpherson, R. F.

AU - Dunn, G. M.

PY - 2008/8/11

Y1 - 2008/8/11

N2 - The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode devices by the substitution of a fully depleted p-type doping spike for the doping notch used to promote domain formation is explored using a Monte Carlo model. The p-type doping spike is a commonly used structure, but its potential use in GaN has not been previously evaluated. The results for a functional doping spike are compared, favorably, to those for a physically reasonable doping notch. (C) 2008 American Institute of Physics.

AB - The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode devices by the substitution of a fully depleted p-type doping spike for the doping notch used to promote domain formation is explored using a Monte Carlo model. The p-type doping spike is a commonly used structure, but its potential use in GaN has not been previously evaluated. The results for a functional doping spike are compared, favorably, to those for a physically reasonable doping notch. (C) 2008 American Institute of Physics.

KW - microwave-power generation

KW - Monte-Carlo analysis

KW - devices

KW - performance

KW - substrate

KW - transport

U2 - 10.1063/1.2969779

DO - 10.1063/1.2969779

M3 - Article

SN - 1077-3118

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062103

ER -

The use of doping spikes in GaN Gunn diodes

Abstract

Keywords

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