The use of doping spikes in GaN Gunn diodes

R. F. Macpherson, G. M. Dunn

Research output: Contribution to journalArticle

14 Citations (Scopus)


The possibility of circumventing the difficulties of fine doping control in GaN Gunn diode devices by the substitution of a fully depleted p-type doping spike for the doping notch used to promote domain formation is explored using a Monte Carlo model. The p-type doping spike is a commonly used structure, but its potential use in GaN has not been previously evaluated. The results for a functional doping spike are compared, favorably, to those for a physically reasonable doping notch. (C) 2008 American Institute of Physics.

Original languageEnglish
Article number062103
Number of pages2
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 11 Aug 2008


  • microwave-power generation
  • Monte-Carlo analysis
  • devices
  • performance
  • substrate
  • transport


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